发明名称 |
METHOD FOR WORKING INSULATING MATERIAL AND RESIST MATERIAL USED FOR WORKED INSULATING MATERIAL BY THE METHOD |
摘要 |
PROBLEM TO BE SOLVED: To reduce the amt. of an expensive photosensitive resin used and to enhance etching precision by etching metallic layers on both sides of a resin film, forming resist patterns with a resin material contg. dispersed fine particles and dry-etching the resin film. SOLUTION: Metallic layers 11 of copper or the like are laminated on both sides of an insulating film 12 of a polyimide or the like. A dry film resist 14 is laminated on the metallic layers 11, exposed and developed to form resist patterns. The metallic layers 11 are etched with an etching soln. contg. iron chloride or the like through the resist 14 as an etching resist and then the resist 14 is removed with a removing soln. Resist patterns of a resin resist 15 contg. dispersed fine particles are formed at prescribed positions on the insulating film 12 with patterned metallic layers 11 and the insulating film 12 is dry-etched. The fine particles are preferably a metal other than silicon, a metallic compd. or carbon having 0.01-10 μm particle diameter. |
申请公布号 |
JP2000054164(A) |
申请公布日期 |
2000.02.22 |
申请号 |
JP19980223828 |
申请日期 |
1998.08.07 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
TAKEI SHIGEO;SEKIGUCHI TAKESHI |
分类号 |
G03F7/038;C23F1/00;G03F7/40;H01L21/302;H01L21/3065 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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