DEVELOPING METHOD AND ETCHING METHOD

摘要

PROBLEM TO BE SOLVED: To form a pattern on a substrate according to a mask in a short time. SOLUTION: A developer under high pressure is sprayed in an atomized state through a spray nozzle 42 to a silicon wafer W. Thereby, an accurate pattern to the mask can be formed in a short time by the chemical effect of the developer and by the physical effect of jet. The developer is preferably jetted at >=3 MPa and <=50 MPa jetting pressure so that particles having >=1μm and <=300μm particle size are sprayed at >=10 m/s and <=500 m/s velocity to develop.