| 摘要 |
PROBLEM TO BE SOLVED: To read out data at high rate while reducing the chip face and power consumption by an arrangement wherein a plurality of sense amplifiers in each memory cell block can be activated in parallel block by block and a data held in the sense amplifier can be read out continuously depending on the burst length. SOLUTION: The nonvolatile semiconductor storage device comprises sense amplifiers (sense amplifier arrays 17-20, 21-24) each having a plurality of memory cell blocks (first and second blocks 1, 2) being divided into predetermined addresses and functioning to receive data from memory cells to be connected with a word line and a bit line selected for each memory cell block, and an internal clock generating circuit 25 generating a signal for activating a plurality of sense amplifiers based on a predetermined timing, wherein the plurality of sense amplifiers in each memory cell block can be activated block by block to read out data held in the sense amplifiers continuously. |
