| 摘要 |
PROBLEM TO BE SOLVED: To realize a high temperature treatment and increase yield and reliabilility without decreasing the degree of integration by using electrolytic or electroless plating for at least one of an upper and a lower electrode which have a ferroelectric in between. SOLUTION: In a semiconductor substrate with a ferroelectric substance disposed on a semiconductor substrate, a pair of electrodes are formed to have the ferroelectric substance in between, with at least one of the electrodes being formed of RuO2. First, Pt/Ti is deposited and is patterned with a resist as a mask, except for an interconnection section. After forming an Au plating interconnection 111, a via layer is etched with the Au plating layer as a mask. Next, Ru 112 is formed by electroless plating and is oxidized to form an RuO2 layer 113. Then, PZT (PbTiO3/PbZrO3) 114, Pt 115 for an upper electrode and ferroelectric substance are deposited. After that, a plasma TEOS film 116 is etched back over the entire surface by thermal RIE and is flattened. Then, SOG is spin-coated and annealed. After the SOG in a flat section is etched back, a hole is made and an upper interconnection is formed. Pt/Ti 117 is used as a barrier metal and Au plating 118 is used for an interconnection. |
