发明名称 Modular high frequency integrated circuit structure
摘要 <p>Disclosed is a manufacturable silicon-based modular integrated circuit structure having performance characteristics comparable to high frequency GaAs-based integrated circuit structures, comprising materials and made in process steps which are compatible with existing low cost silicon-based integrated circuit processing. <IMAGE></p>
申请公布号 EP0980095(A1) 申请公布日期 2000.02.16
申请号 EP19990306215 申请日期 1999.08.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BARTUSH, THOMAS ADAM;HARAME, DAVID LOUIS;MALINOWSKI, JOHN C.;PICIACCHIO, DAWN T.;TESSLER, CHRISTOPHER L.;VOLANT, RICHARD PAUL
分类号 H01L21/302;H01L21/768;H01L21/822;H01L23/522;H01L23/532;H01L23/66;H01L27/04;(IPC1-7):H01L21/768;H01L23/538 主分类号 H01L21/302
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