| 摘要 |
<p>A method and arrangement for determining state information of a high-power semi-conductor, the power semiconductor comprising a collector (C), an emitter (E) and a gate (G), and a gate driver (3) comprising an auxiliary voltage input is connected to the gate of the power semiconductor. The method is characterized by steps wherein the auxiliary voltage (Vcc) of the gate driver (3) is used as reference voltage, saturation voltage (Vsat) of the power semiconductor (1) is compared with the reference voltage by using an optoisolator (4), and a detection signal of state information is generated depending on the magnitudes of the saturation voltage and the reference voltage. <IMAGE></p> |
