| 摘要 |
PCT No. PCT/NO95/00091 Sec. 371 Date Dec. 6, 1996 Sec. 102(e) Date Dec. 6, 1996 PCT Filed Jun. 2, 1995 PCT Pub. No. WO95/33683 PCT Pub. Date Dec. 14, 1995Silicon carbide is produced in two steps in that silicon dioxide and a carbon source in a first step is reacted at a temperature in the range of 1500-1800 DEG C., whereby the silicon dioxide and the carbon source react to form beta -silicon carbide. The resulting beta -silicon carbide formed is subsequently treated at a temperature of 1800-2300 DEG C. for conversion of the beta -silicon carbide into the desired end product, via alpha -silicon carbide.
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