发明名称 SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target excellent in stability of electric discharge property and particle property, which is capable of forming a Cr-V thin film excellent as a substrate layer for magnetic thin film constituting a magnetic disk. SOLUTION: A sputtering target is a sintered alloy substantially composed of Cr and V, and is constituted by using a sintered alloy which contains Cr and V particles having particle sizes of <250μm, 10-50 atom.% V and 0-(0.0028×C) wt.% oxygen, wherein C is V content in atom.%.
申请公布号 JP2000038662(A) 申请公布日期 2000.02.08
申请号 JP19980209223 申请日期 1998.07.24
申请人 TOSOH CORP 发明人 KUROSAWA SATOSHI;MAN TOSHIHIRO;ARAI KAZUYOSHI;TAKAHATA TSUTOMU
分类号 C22C1/04;C22C27/06;C23C14/34;H01F41/18;(IPC1-7):C23C14/34 主分类号 C22C1/04
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