Using a superlattice to determine the temperature of a semiconductor fabrication process

摘要

A method is provided for determining the temperature of a semiconductor fabrication process in which a resistivity versus temperature calibration curve for a superlattice structure is created. A plurality of similar superlattice structures which include alternating layers of a conductor and a semiconductor may be annealed at different temperatures. The resistivity of each superlattice structure may then be measured after the superlattice structures have been cooled to room temperature in order to form the calibration curve. A similar superlattice structure may then be subjected to the temperature at which the semiconductor fabrication process is typically performed, causing the resistivity of the superlattice structure to change. Based on the resulting resistivity of the superlattice structure, the calibration curve may be used to determine the process temperature of the superlattice structure during the fabrication process. The length of time that the superlattice structure is subjected to the process temperature is selected to be the time duration of the process whose temperature is being determined. Once the actual process temperature is known, the temperature controls for the process may be adjusted in an attempt to reach the desired process temperature.