| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate heat treatment method which can form a specified film of low dielectric constant, and its device. SOLUTION: In a condition that a substrate carried in a chamber is retained in the position of retention apart from a heating plate, nitrogen gas is introduced (S1-S3) into the chamber. When the inside of the chamber is replaced with nitrogen gas and it turns to low-oxygen concentration atmosphere, the substrate retained in the position of retention is shifted to the heating position, and it is heated with a heating plate (84). When the heating is finished, the substrate is shifted from the heating position to the retention position, and the substrate retained in retention position is cooled (S5-S6) by a cooling plate. When the cooling is finished, the chamber is opened and the substrate is carried out (S7-S8). Accordingly, when the substrate is heated to the specified temperature or over, the atmosphere around the substrate is always put in low-oxygen concentration atmosphere, so a specified film low in dielectric constant can be made.
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