| 摘要 |
A nonvolatile semiconductor memory device includes a memory cell array having a plurality of pages, each page being formed of a plurality of memory cells connected to one word line, and serving as the data write unit, and a plurality of blocks formed of a plurality of pages, and a controller for selecting any one of the plurality of blocks, selecting any one of pages in the selected block, erasing data stored in the selected page, and then writing new data in the selected page, while reading data stored in non-selected pages within the selected block, storing the data in a buffer memory outside the memory cell, a dedicated buffer memory in the memory cell, or an unused block in the memory cell, performing a data erase, and rewriting the data stored in the buffer memory or unused block.
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