| 摘要 |
PROBLEM TO BE SOLVED: To lessen the number of components of an optical system to reduce the size of an optical pickup by forming a second semiconductor laser so as to contact the side wall of a ridge type stripe-like first semiconductor laser. SOLUTION: On an n-type substrate 1 are formed an n-type clad layer 2, strain multiple quantum well active layer 3, p-type clad layer 4, etch stop layer 5, p-type clad layer 6, p-type intermediate layer 7, p-type contact layer 8, and Al2O3 film 9. They are etched like a ridge type stripe, starting from the top layer 9 to the etch stop layer 5, a p-type clad layer 10, active layer 11, n-type clad layer 12, and n-type contact layer 13 are grown on the entire substrate 1 surface, and a polymer layer 14 deposited on the film 9 and film 9 are removed. To avoid contacting the contact layers 8, 13, the interface between both layers is removed like a groove, and a metal film is deposited on the back surface of the substrate 1 and surfaces of the contact layers 8, 13 to form a p-type common electrode 15 and n-type electrodes 16, 17, thus obtaining a semiconductor laser.
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