CAPACITOR AND FABRICATING METHOD OF THE SAME

摘要

PURPOSE: A capacitor is provided to prevent an electric bridge between storage nodes resulting from slope etching of transition metal by forming a thin transition metal layer and a polysilicon layer to be thin and thick, respectively. CONSTITUTION: The capacitor comprises a storage contact plug penetrating an insulating layer formed on a semiconductor substrate to be electrically connected to the semiconductor substrate; a conductive layer formed on a part of the insulating layer at the storage contact plug and both sides thereof; a barrier metal layer formed on the conductive layer to cover a top surface and both sidewalls of the conductive layer; a transition metal layer formed on the barrier metal layer to cover a top surface and both sidewalls of the barrier metal layer; and a dielectric film formed on the transition metal layer to cover a top surface and both sidewalls of the transition meta layer.