| 摘要 |
PURPOSE: A lateral dynamic metal oxide silicon transistor is provided to prevent punchthrough and to improve current characteristic. CONSTITUTION: The transistor comprises: (a)a semiconductor substrate of a first conductive type, (b)a well of a second conductive type formed in the substrate, (c)a drain of the second conductive type formed in the well, (d)a drift region of the second conductive type formed on the substrate adjacent to the well, (e)a body region of the first conductive type isolated from the drift region, (f)a first source of the second conductive type formed in the body region, (g)a second source of the first conductive type formed in the body region, (h)a gate electrode covered with a gate insulating film, and (i)a source electrode and a drain electrode. In the device, one ground pattern or more are formed on the open surface between the resonance holes, connected with the ground electrode.
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