SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device is provided to increase capacitance by extending an area of a capacitor. CONSTITUTION: The device comprises a semiconductor substrate; an insulating layer having a contact hole formed on the semiconductor substrate; a storage node formed on the insulating layer including the contact hole, wherein the storage node is cross on a layout; a dielectric film formed on a surface of the storage node; and a plate node formed on the insulating layer including the dielectric film.