| 摘要 |
A power semiconductor component in which a highly doped (n+) zone (2) is provided on one surface (11) of a basically doped (n-) semiconductor body (1). A further highly doped (p+) zone (3) is separated from the highly doped (n+) zone (2) by a basically doped region (8), the electrical conductivity of zone (3) being opposite in polarity to that of basically doped zone (1) in order to form a pn-junction. The highly doped (n+) zone (2) is laterally limited within the semiconductor body (1) i.e. in a direction transverse to the main current path direction (4) occurring during operation of the component, and an edge zone (5) borders on the laterally limited zone (Z) and is doped for the same conductivity (polarity) as the basically doped zone (1), but in higher concentration of dopant material. The edge zone (5) has smaller dimensions relative to the laterally limited zone (2) in the main direction of current conduction (4) together with an optionally smaller dopant distribution gradient in the main direction (4) giving rise to a greater effective thickness of that part of the basically doped zone of the semiconductor (1) where it joins the edge zone (5) in the main direction (4). |
