POWER METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PURPOSE: The power semiconductor device is provided to reduce sheet resistance of source by reducing the length of a current path for collecting drain current to source. CONSTITUTION: In the power semiconductor device, a source is arranged on the surface of a substrate, is comprising of a bar-shaped center part crossing a circle-shaped outer part and two bar-shaped current path parts crossing the outer part at the center part. A second conducting body is formed in shape of wrapping the source. A source electrode is connected with the source through a source contact part formed on the center part of the source. A gate is formed in shape of wrapping the outer part of the source. A drain is arranged in lower part of the substrate.