| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor integrated circuit equipped with a fuse and an active device to be manufactured through a single masking step. SOLUTION: A fuse forming method comprises a first step, where a fuse 12 and an active device 14 are each formed on the different regions of a semiconductor substrate, a second step where a dielectric layer 32 is formed on the fuse 12 and the active device 14, a third step where a via hole 56a is formed penetrating through the selected region of the dielectric layer 32 to expose a part of the lower fuse 12 and a part of the contact region of the lower active device 14, a fourth step where a conductive material 46 is deposited above the dielectric layer 32 through the via hole to bury the fuse and the exposed part of the contact region, and a fifth step where the conductive material deposited on the fuse is selectively removed and a part of the conductive material deposited on the contact region of the active device is left unremoved. |
