| 摘要 |
PURPOSE: A TFT substrate for a LCD and manufacturing method thereof are provided, which does not deposit an amorphous silicon layer and forms a channel layer on an n+ doped amorphous silicon layer. CONSTITUTION: A TFT substrate for a LCD comprises: a gate electrode(20) to be formed on a transparent insulating substrate(10); a gate insulating film(30) for covering the gate electrode(20); an amorphous silicon layer to be formed on the gate insulating film(30), including a channel region (41) having an n+ impurity and a p+ impurity and resistance contact region(40) having an n+ impurity; a source/drain electrode(51,52) to be formed on the resistance contact region(40); a protecting film(70) to be formed on the source/drain electrode(51,52), having a contact hole(C) for exposing a part of the drain electrode(52); and a pixel electrode(80) to be formed on the protecting film(70) and be coupled to the drain electrode (52) through the contact hole(C). Thereby, an increase of off current and simplify the progress are prevented.
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