NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: An NOR-type flat-cell mask ROM(read only memory) is provided to improve a uniformity of cells by decreasing a loading effect using a dummy line. CONSTITUTION: The memory device comprises a plurality of buried N+ diffusion layers(102) used as a sub bit line and of memory cell array and a source and drain of cell transistor formed on a semiconductor substrate(100); a plurality of word lines(104) cross of the buried N+ diffusion layer and formed on a gate dielectric(103) of the semiconductor substrate; a plurality of selective lines(B/L1, B/L2...) formed in parallel with the word lines(104) so as to selectively transport external signals to the sub bit line through a main bit line; and dummy line(105) formed in parallel with the word lines(104) at spaced region between the word lines adjacent to the selective lines.