| 摘要 |
PURPOSE: Method of forming a angular velocity sensor is provided to minimize the number of the mask by using a silicon direct bonding wafer. CONSTITUTION: The method includes forming a sacrificial silicon dioxide layer on a lower silicon wafer. An upper silicon wafer is bonded onto the sacrificial silicon dioxide layer, to form the silicon direct bonding wafer. A silicon dioxide is grown on the upper silicon wafer. Using a first mask, the silicon dioxide and the upper silicon wafer are patterned into desired configuration. The sacrificial silicon dioxide layer under a selected desired configuration is etched away. An electrode layer is deposited on the resulting structure. Using a second mask, the electrode layer is patterned to form an electrode. As a result, the number of the mask can be minimized, thereby simplifying manufacturing process and costing down thereof.
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