发明名称 |
Phasenschiebermaske und Verfahren zur Herstellung derselben |
摘要 |
A phase shift mask and a method for fabrication of a phase shift mask provided with a groove formed by etching to a predetermined depth a portion of a transparent substrate on which an edge portion of a phase shift film pattern directly coated on the transparent substrate is disposed, thereby capable of preventing the phenomenon of an undesirable photoresist film residue being left upon a silicon substrate using a Levenson-type phase shift mask. |
申请公布号 |
DE19501564(C2) |
申请公布日期 |
2000.02.03 |
申请号 |
DE1995101564 |
申请日期 |
1995.01.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
HAM, YOUNG MOG |
分类号 |
G03F1/30;G03F1/68;H01L21/027 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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