| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-port storage cell in which a column interleave selection circuit element enabling writing in a storage cell through plural different writing ports, is incorporated into a SRAM. SOLUTION: A column selection switch is incorporated in each storage cell by adding additional separated switches between storage cells 410a-410c of a storage node 402a-402c and bit lines of specific writing ports in order to prevent other storage cells connected to the same word lines of the same interleaved array from being affected by writing in a cell. A writing data bus corresponding to each writing port of all interleaved cells is used commonly by all storage cells 410a-410c in a common interleave group, as each adjacent pairs of storage cells in a common row use commonly a bit line integrated to a common data bus, the number of bit lines required is reduced.
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