| 摘要 |
PROBLEM TO BE SOLVED: To simplify a process by forming one silicon film, and reforming it in such a manner that a certain part is of a source/drain region and another certain part is of a channel forming region. SOLUTION: A substrate is cleaned, and a tantalum film is formed. With a mask used the film is patterned, and etched, and then an anodized film 103 is formed. A resist is removed, and a silicon nitride film 104 is formed. After the substrate is cleaned, an amorphous silicon film is formed, and patterned with a mask. Then, the amorphous silicon film is etched to form a semiconductor region 105. The retained resist is removed. The substrate is cleaned, a silicon nitride film is formed. Then, a silicon nitride mask 106 is patterned with a mask, then etched, phosphorus ion is implanted to form an impurity region 108. Then the substrate is cleaned, and the resist is removed. The mask 106 is etched by laser annealing, then cleaned to form an aluminum film, and etched to form aluminum wiring 110. Then, an NTFT can be manufactured.
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