| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the occurrence of pattern deformation defects at the photo-lithography step and lower the cost of the epitaxial growth. SOLUTION: A protecting film 11 of a photoresist is attached to the surface 1a of a silicon wafer 1. Oxygen ions 12 are injected to the back face 1b of the silicon water 1, then the protecting film 11 is removed from the surface 1a of the silicon wafer. The wafer is placed on the susceptor set in the growth oven of the epitaxial growth machine, heat-treated at elevated temperature in a hydrogen atmosphere to form an insulating film 13 made of silicon oxide on the back face 1b of the silicon wafer, subsequently as the temperature in the growth oven is lowered, a dichlorosilane gas and a phosphine gas are introduced together with a hydrogen gas into the growth oven to cause the chemical reactive deposition whereby the objective semiconductor crystalline layer 14 is epitaxially grown on the surface 1a of the silicon wafer.
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