Process for controlled atmosphere chemical vapor deposition

摘要

An improved chemical vapor deposition apparatus and procedure is disclosed. The technique provides improved shielding of the reaction and deposition zones (26, 28) involved in providing CVD coatings by establishing a barrier zone (30) wherein gases flowing from a reaction zone (26) and deposition zone (28) to the ambient atmosphere are made to flow at a velocity of at least 15.24 m/min. Coatings can thus be produced, at atmospheric pressure, of materials which are sensitive to components in the atmosphere on substrates which are sensitive to high temperatures and which are too large, or inconvenient, to process in vacuum or similar chambers. The improved technique can be used with various energy sources and is particularly compatible with Combustion Chemical Vapor Deposition (CCVD) techniques. <IMAGE>