Circuit structure comprising a parasitic transistor having a very high threshold voltage

摘要

A circuit structure integrated in a semiconductor substrate (40) comprises at least one pair of transistors (20,21) being formed each in a respective active area region (30) and having a source region (22) and a drain region (23), as well as a channel region (24) intervening between the source and drain regions (22,23) and being overlaid by a gate region (25); the gate regions (25) are connected electrically together by an overlying conductive layer (28) and respective contacts (14) wherein the contacts (14) between the gate regions (24) and the conductive layer (28) are formed above the active areas (30).