| 摘要 |
PROBLEM TO BE SOLVED: To provide a new method for obtaining minute hole patterns from a novolak/quinonediazido type positive resist composition. SOLUTION: The resist pattern can be formed by coating a substrate with the novolak/quinonediazido type positive resist composition to form a resist film, and patternwise exposing this resist film, developing it with an alkaline developing solution, irradiating it with a light shorter in wavelength than the patternwise exposure light, and then, heating it to a temperature high enough to expand the pattern to form a resist pattern having the areas freed of the resist parts reduced. |
