IMPURITY QUANTITY MEASURING METHOD AND DEVICE THEREFOR

摘要

PROBLEM TO BE SOLVED: To realize accurate measurement of a deposited impurity quantity by demanding first and second measured values of a charge related predeter mined electric characteristic existing near an insulation film surface prior to and after the heating processing of a substrate. SOLUTION: When a high voltage is applied to an ion generating electrode 226 to generate a corona discharge, a gas Gs fed into an ion injection nozzle 220 is ionized. A charged molecule ionized is injected from a tip end of an injection nozzle 220 and is deposited on a semiconductor wafer 100 to charge the surface. An electric charge quantity measuring portion 300 is provided with a C-V measuring portion 310, a measuring electrode 320 and a computer 330. The C-V measuring portion 310 measures the C-V characteristic of the semiconductor wafer 100 in a noncontact state. The C-V measuring portion 310 is connected to the computer 330. A deposit impurity quantity determining portion 332 and a film inside impurity ion quantity determining portion 334 in the computer 330 determine a deposit impurity quantity on the insulation film surface and a film inside impurity ion quantity existing in the insulation film, respectively.