| 摘要 |
PROBLEM TO BE SOLVED: To suppress fluctuation in the output voltage from a constant voltage generating circuit by mixing first conductivity type MOS transistors and second conductivity type MOS transistors while having first and second conductivity type gate electrodes, respectively. SOLUTION: Impurity concentration distribution is set identical totally including channel dope layer for P type gate P channel transistor S1 having source and drain and N type gate P channel transistor S2 having source and drain. Furthermore, dimensions of channel length and channel width on the photomask are equalized for the P type gate P channel transistor S1 and the N type gate P channel transistor S2. P type gate electrodes of the P type gate P channel transistors S1 are mixed with the N type gate electrodes of the N type gate P channel transistors S2.
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