| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing it, wherein a layout area on a semiconductor chip is so saved as to be made adaptive to such reciprocal tendencies as reduction in size and increase in component density. SOLUTION: A storage node 14 is provided in a trench 18. A word line 30 is provided inside a substrate, while adjoining a part of the substrate. With a transistor provided vertically, the word line 30 acts as a gate while the storage node 14 and a bit line act as either a source or a train, and when activated by the word line 30, the transistor becomes conductive between the storage node 14 and the bit line. |
