INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To form an interlayer insulating film having planar or smooth surface on a plane having protrusions and recesses by photochemical vapor phase reaction employing UV light source excitation or photochemical vapor phase reaction and plasma CVD using employing liquid reactive gas. SOLUTION: A silicon oxide coating 10 is formed by about 5000Åon a substrate 12 having protrusions and recesses by photo assisted CVD. The silicon oxide coating 10 is formed uniformly along the profile of the protrusions and recesses. Subsequently, a silicon oxide film 11 is formed by 1.5-2.0μm on the silicon oxide coating 10. The silicon oxide film is formed selectively in the recess because liquid reactive gas is employed and planar upper end part is obtained. Since an insulating film having planar or smooth surface can be formed even if the breakdown strength is low, apparatus cost and production cost can be reduced.