| 摘要 |
PROBLEM TO BE SOLVED: To enhance pinch-off characteristics by forming a buffer layer on a single crystal substrate and then forming an active layer of aluminum nitride/ gallium/indium crystal layer through the buffer layer. SOLUTION: A buffer layer 110 containing boron and phosphorus as constitutional elements is deposited on an insulating single crystal substrate 101 of calcium fluoride. A boron nitride phosphide mixed crystal layer 114 is formed on the buffer layer 110 by ordinary atmospheric pressure MOCVD employing trimethyl gallium as a gallium source, ammonia as a nitrogen source and phosphine as a phosphorus source. A crystal layer 115 of aluminum nitride/ gallium/indium crystal layer represented by a general formula AlαGaβIn1-α-βN1-γMγ(0<=α,β<=1, 0<=α+β<=1, M represents a group V element other than nitrogen, 0<=γ<1) is formed on the mixed crystal layer 114.
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