| 摘要 |
PROBLEM TO BE SOLVED: To prevent an etched substance from redepositing on resist sidewalls and to reduce critical dimension losses and improve profile reproducibility by effecting argon plasma isotropic etching after a step by an ion milling has been performed. SOLUTION: A photoresist 101 is applied to a Pt film 102 formed on a silicon substrate 103 by means of spin coating. Then, the resultant substrate is subjected to anisotropic etching by an ion milling system for about 7 minutes to thereby remove the film 102 completely therefrom. At this time, redeposits 104 of the etched substance are formed on the sidewalls of the photoresist 101. Then, the resultant substrate is subjected to argon plasma isotropic etching for 10 minutes at 1 m Torr and 500 W. Since argon ions 105 bombard the substrate 103 and the resist sidewalls, the etched substance does not redeposit on the sidewalls. However, the substrate 103 is etched due to overetching. As a result, a profile free of sidewall redeposits 104 can be obtained after the removal of the photoresist.
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