| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide CSP(chip size package) type semiconductor device structure for appropriately absorbing the deformation stresses and distortions of both a semiconductor chip and a motherboard caused by the difference in the thermal coefficients of expansion. SOLUTION: An external connection terminal land 19, consisting of a first metal layer 16 that is electrically connected to an arbitrary electrode 3, a buffer layer 17 formed on the first metal layer 16, and a second metal layer 18 that, is electrically connected to the first metal layer 16 while covering the surface of the buffer layer 17 is provided at a surface side, where the electrode 3 of the semiconductor chip 2 is formed in a semiconductor device 1a.</p> |
