| 摘要 |
PROBLEM TO BE SOLVED: To avoid or reduce the distortions of a mask by heat and the image quality degradation through irregularly scattered particles by means of a lithography apparatus which exposes a radiation-sensitive layer in a mask pattern on a substrate with the use of ultraviolet rays, X-rays, electron beams, etc. SOLUTION: When a lithography apparatus exposes a transparent region 1 divided by an opaque supporting body 2 of a mask, the device starts scanning by creating a relatively narrow beam adjacent to one of the supporting bodies 2, and while the beam is adjacent to the supporting body 2, increases the width of the beam and scans the other support body 2 with the widened beam. Therefore, a substrate W can be exposed substantially uniformly without much distortion to the mask, because the support bodies 2 are not heated by the beam. |
