| 摘要 |
PROBLEM TO BE SOLVED: To reduce the occupation area of a capacitor while the same capacitance is assured, by forming at least one electrode of two capacitor electrodes of a semiconductor substrate in a closed loop. SOLUTION: Using an ion beam etching, for example, which uses an argon, inert gas, as an ion source, a beam is made incident, vertically, on a semiconductor substrate 101, for entire-surface etching. Being as anisotropic etching, the side wall of a dielectrics 110 is not etched to leave an electrodes 112 and 113, while connected in a self-matching manner to an embedded plug 109 near the dielectrics 110. Provided that the dielectrics 110 is a pattern comprising a closed curve, no process for separating the two capacitor electrodes 112 and 113. Thus, forming a capacitor dielectrics 111 vertical to the semiconductor substrate 101 with two electrodes formed on both sides, the occupation area of a capacitor is reduced. |
