| 摘要 |
PROBLEM TO BE SOLVED: To hardly cause diffusion of oxygen and suppress generation of a space charge region and suppress fixed polarization by depositing ferroelectric films of different compositions in layers on a member to form a ferroelectric film by using only one kind of targets by changing sputtering conditions. SOLUTION: In the case that high frequency magnetron sputtering is used, two sputter chambers are prepared. In a first chamber, Pb(Zr0.5Ti0.5)O3 is used as a target. In a second chamber, Pb1.2(Zr0.5Ti0.5)O3 is used as a target. And, a Pt electrode 101 is formed on a silicon substrate integrated with MOS transistors and PZT films 102, 103, 104 are formed continuously in the second chamber, in the first chamber, and again in the second chamber, respectively. Even with one target, a three-layer capacitor can be fabricated by changing the sputtering conditions such as the gas pressure in sputtering. |
