FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which inner stress is suppressed while improving step coverage. SOLUTION: The method for fabricating a semiconductor device comprises a step for forming a tungsten film on an insulation film having a contact hole 13 while filling the contact hole 13 with tungsten, and a step for diffusing silane based compound gas molecules or silicon atoms into the tungsten film 15 by exposing the surface thereof to silane based compound gas 16. Inner stress of the tungsten film 15 is relaxed through diffusion.