| 摘要 |
PROBLEM TO BE SOLVED: To decrease the dielectric constant of an interlayer insulating film in the semiconductor device having an embedding wiring embedded in an insulating film, and the manufacturing method thereof. SOLUTION: This semiconductor device is constituted of an insulating film 12 which is formed on a lower substrate 10 and where a via hole 22 reaches a lower substrate 10, an insulating film 18 which is formed on the insulating film 12 where a wiring groove 24 is formed in a region including the region in which the via hole 22 is formed, a stopper film 14 which is selectively formed on the insulating film 12 in the wiring groove 24 and comprises a material having etching characteristics different from those of the insulating film 12 and the insulating film 18, and a wiring layer 30 which is embedded in the wiring groove where the stopper film 14 is formed and in the via hole 22 and connected to the lower substrate 10 via the via hole 22.
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