| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device where a movable communication equipment terminal can be lessened in size and enhanced in performance. SOLUTION: A wiring structure formed on a GaAs substrate 101 is equipped with a grounding conductor layer 102 formed on a substrate 101, a dielectric film, and a conductor wire 105. The dielectric film is divided in a first dielectric part (silicon nitride 104) located in a region between the underside of the conductor wire 105 and the upside of the grounding conductor layer 102 and another part (strontium titanate film 103). The first dielectric part is different from the other part in permittivity, whereby the dielectric film can be optimized in equivalent permittivity.</p> |
