MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To make a drawing pattern highly accurate and to improve the throughput of a batch transfer system of electron-beam direct drawing technology. SOLUTION: For an evaluation pattern P3, formed by putting a 1st pattern P1b drawn on the resist by using a batch graphic aperture and a 2nd pattern P2b drawn on the resist by using a variable rectangular aperture one over the other, X-direction distances Lx1 and Lx2 and Y-direction distances Ly1 and Ly2 between the 1st pattern P1b and the 2nd pattern P2b are measured to adjust the positional accuracy of the batch graphic pattern or the connection precision of the batch graphic pattern and variable rectangular pattern according to the X-direction and Y-direction deviation quantities.