| 摘要 |
PROBLEM TO BE SOLVED: To generate an appropriate coating in an opening having a high aspect ratio by heating a substrate stack to the stack temperature of a specified range, and controlling the stack temperature, an atmosphere and a mutual operation to be self-restrictive ones having self-restrictive thickness smaller than junction depth. SOLUTION: Deposition for generating a desired contact against shallow junction is executed with a condition for generating appropriate self-restrictive effect when deposition is executed on a silicon substrate. Tungsten is deposited in the temperature range of 250 deg.C-600 deg.C Tungsten is appropriately deposited and upper metal such as aluminium is directly deposited on a deposited material or is deposited on the deposited material which is left after tungsten on a surface in a lateral direction is removed. Then, the thickness of a metallic part can be increased. A fixed layer, a tungsten layer deposited with the appropriate condition and the metallic layer of the upper layer such as aluminium if needed are combined.
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