| 摘要 |
PROBLEM TO BE SOLVED: To minimize a peak current taken out by a sense amplifier without affecting speed of a whole memory device by speed with which a power source current is supplied to a sense amplifier. SOLUTION: A semiconductor memory device sensing circuit 400 is indicated. The circuit 400 comprises many sense amplifiers 402, each of them is coupled to a first supply node 414 by first drive devices (P404-o to P404-n), and coupled to a second supply node 420 by second driver devices (N404-0 to N404-n). Increased driving current capacity is provided by many first boosting capacitors C400 coupled between a first supply node 414 and intermediate voltage (Vplate) and many second boosting capacitors C402 coupled between a second supply node 420 and intermediate voltage (Vplate). |
