| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor of a semiconductor memory device, wherein the surface area of a storage electrode is increased, while the margin between the storage electrodes is fully assured for preventing micro bridges. SOLUTION: A second insulating film 110 is formed on a plug 109 and a first insulating film 106, and the second insulating film 110 is etched, using a storage-electrode formation mask, until a part of the plug 109 and the first insulating film 105 resulting in formation of a storage electrode opening 111. On both sidewalls of the storage electrode opening 111, a conductive spacer 112, which electrically connected to the plug 109 is formed. An HSG film 113 is formed on the surface of the plug 109 and the conductive spacer 112. The HSG(hemi-spherical grain) film 113 is grown on the inside wall of the storage electrode, so that the microbridge between storage electrodes caused by abnormal growth and excessive growth of the HSG film 113 is prevented. |
