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发明名称
Verfahren zur Herstellung einer strahlungsgeschützten Silizium-auf-Isolator Halbleiteranordnung
摘要
申请公布号
DE69422265(D1)
申请公布日期
2000.01.27
申请号
DE1994622265
申请日期
1994.10.14
申请人
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK
发明人
BRADY, FREDERICK T.;HADDAD, NADIM F.
分类号
H01L21/20;H01L21/762;(IPC1-7):H01L21/76;H01L21/265
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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