发明名称 FORMATION OF FILM AND DEVICE
摘要 PROBLEM TO BE SOLVED: To effectively execute the embedment of fine pores on a substrate without the problem of the generation of dust by making the distance between a target and a substrate longer than the diameter of a substrate, holding the pressure in a vacuum tank to the low one and executing sputtering film formation. SOLUTION: The distance between a target 8 and a substrate 10 is set to be made longer than the diameter of the substrate 10. The pressure in a vacuum tank 5 is reduced via a vacuum exhaust port 7 by a vacuum pump to hold the pressure in the vacuum tank 5 to less than 1×10-1 Pa. In this state, magnetron discharge by a high frequency-direct current combined bias is generated, and the ionization of gaseous argon as an atmospheric gas is promoted. The ionized gaseous argon is accelerated by negative voltage, is made incident on the target 8 and sputters the atoms on the surface. The beaten-out atoms fly in various directions by the cosine law, and, a part thereof deposits on the substrate 10 to form a film. Since the distance between the substrate 10 and the target 8 is regulated, the probability of the atoms to be made incident on the substrate 10 is made high.
申请公布号 JP2000026964(A) 申请公布日期 2000.01.25
申请号 JP19990134457 申请日期 1999.05.14
申请人 ULVAC CORP 发明人 OBINATA HISAHARU;KIYOTA TETSUJI;TOYODA SATOSHI;KADOKURA YOSHIYUKI
分类号 H01L21/203;C23C14/34;C23C14/44;H01L21/285;(IPC1-7):C23C14/34 主分类号 H01L21/203
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