| 摘要 |
PURPOSE: A semiconductor device is provided to suppress the position error of a wiring layer and present high integration. CONSTITUTION: The semiconductor device comprises: a semiconductor substrate(1) having a main surface; the first wiring layer(5) formed on the substrate(1); the first interfacial insulation films(9,28,29,33,34,35,46) formed on the substrate(1) to cover the first wiring layer(5); the second wiring layer(12) formed on the first interfacial insulation films; and the second interfacial insulation films(13,14,18,20,21,22,23,24,25,26,30) formed on the first interfacial insulation films to cover the second wiring layer(12).
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