| 摘要 |
PROBLEM TO BE SOLVED: To provide an equipment which is capable of performing vapor pressure control, effectively performing the initial operation for inhibiting a compound single crystal from being contaminated by impurities and accordingly, producing a high quality compound semiconductor single crystal, and also, to provide the method using the equipment. SOLUTION: This equipment is provided with: a crucible 7 for receiving a crystal raw material 7a; an airtight chamber 6 for covering the crucible 7; and a sealing member 10 for keeping the airtight chamber 6 airtight; wherein the crystal raw material 7a received in a crucible 7 Is cooled and solidified from its lower side to grow a compound single crystal. Also, in the crucible 7, a support/movement means 9 is placed in such way that it is freely movable in the direction of the axial center of the airtight chamber 6, to freely opening/ closing a gas passage 12 communicated with the inside and outside of the chamber 6, by the movement of the means 9 through the sealing member 10.
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