| 摘要 |
PURPOSE: A forming method of metal wires using damascene is provided to improve an adhesive force between an etch stopper and an HSO(hydrogen silsesquioxane) layer having a low dielectric constant. CONSTITUTION: The method comprises the steps of: forming an interlayer dielectric by sequentially depositing a first HSQ layer(22), a first etch stopper(23) made of UV transparent oxynitride, a second HSQ layer(24) and a second etch stopper(25) on a semiconductor substrate(20) having a lower conductive pattern(21); forming a first contact hole(27) by etching the interlayer dielectric to expose a portion of the lower conductive pattern(21) using a first PR pattern(26); removing the first PR pattern(26); forming a second contact hole(29) by etching the second etch stopper and the second HSQ layer to expose the first etch stopper using a second PR pattern(28); removing the second PR pattern(28); annealing the resultant structure used H2 gas before and after the first and second PR patterns(26,28) are removed, respectively.
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